MMFT960T1
Preferred Device
Power MOSFET
300 mA, 60 Volts
N?Channel SOT?223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc?dc converters,
solenoid and relay drivers. The device is housed in the SOT?223
package which is designed for medium power surface mount
applications.
Features
http://onsemi.com
300 mA, 60 VOLTS
R DS(on) = 1.7 W
N?Channel
?
?
?
?
Silicon Gate for Fast Switching Speeds
Low Drive Requirement
The SOT?223 Package can be Soldered Using Wave or Reflow
The Formed Leads Absorb Thermal Stress During Soldering
G
D
Eliminating the Possibility of Damage to the Die
?
Pb?Free Package is Available
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol Value
Drain?to?Source Voltage V DS 60
Unit
V
1
2
4
TO?261AA
CASE 318E
STYLE 3
Gate?to?Source Voltage ? Non?Repetitive
Drain Current
Total Power Dissipation @ T A = 25 ° C
(Note 1)
Derate above 25 ° C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction?to?Ambient
V GS
I D
P D
T J , T stg
R q JA
± 30
300
0.8
6.4
?65 to 150
156
V
mAdc
W
mW/ ° C
° C
° C/W
3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
AYW
FT960 G
G
Maximum Temperature for Soldering
Purposes
T L
260
° C
1
Gate
2
Drain
3
Source
Time in Solder Bath 10 S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR?4 glass epoxy printed circuit board using minimum
A = Assembly Location
Y = Year
W = Work Week
G = Pb?Free Package
FT960 = Device Code
(Note: Microdot may be in either location)
recommended footprint.
ORDERING INFORMATION
Device
MMFT960T1
MMFT960T1G
Package
SOT?223
SOT?223
Shipping ?
1000 Tape & Reel
1000 Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 5
1
Publication Order Number:
MMFT960T1/D
相关PDF资料
MMG3002NT1 IC AMP RF GP 3600MHZ 5.2V SOT-89
MMG3006NT1 TRANS GPA 33DBM 16-QFN
MMG3007NT1 IC AMP RF GP 6000MHZ 5V SOT-89
MMG3H21NT1 TRANS HBT 20.5DBM 19.3DB SOT-89
MMH3111NT1 TRANS GAAS HFET SOT-89
MML20211HT1 IC LNA 2GHZ 21P1DB 8DFN
MMS-1A-V2 0 SENSOR MICRO MACHINED SMD
MMSF3P02HDR2 MOSFET P-CH 20V 5.6A 8-SOIC
相关代理商/技术参数
MMFT960T1_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
MMFT960T1G 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MMFTN123 制造商:Diotec Semiconductor 功能描述:
MMFTN138 制造商:Diotec 功能描述:Bulk
MMFTN170 制造商:Diotec Semiconductor 功能描述:
MMFTN20 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:N-Channel Enhancement Vertical D-MOS Transistor
MMFTN3018W 制造商:Diotec Semiconductor 功能描述:
MMFTP84 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:P-Channel Enhancement Mode Vertical D-MOS Transistor